Process and facilities

SICAT 's patented process includes three basic steps:

  • (i) raw materials - commercially available silicon powders, carbon, and resin - are intimately mixed into a paste;
  • (ii) the paste is shaped through the most appropriate technique into cylinders, trilobes, rings, tablets and spheres, and hardened;
  • (iii) heating under controlled atmosphere at temperatures below 1400ºC converts the precursor material into porous, self bonded beta SiC.
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As needed, a final heat treatment can burn off residual carbon and further oxidize the surface of the beta SiC.

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The SiCAT facility, covering 1500 square meters, is located in Saverne, near Strasbourg, and employs 7 engineers and technicians.